Abstract
AbstractBulk indium phosphide crystals have been grown by the synthesis, solute diffusion (SSD) method. Various growth temperatures and temperature gradients in the indium melt were investigated. The growth temperature of about 850–900°C and the temperature gradient of about 10–15°C cm−1 were found as the most suitable growth conditions. All grown crystals were of the n‐type either undoped or doped with Te or Sn. Infrared light‐emitting junctions were grown by single LPE process. Characteristic surface structures of InP epitaxial layers as a function of the growth temperature and cooling rate were observed. Efficiencies of LED's have been typically 0.8%. Single LPE process on LEC InP substrates has given LED's with substantially lower efficiencies.
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