Abstract
Sulfur-doped InP single crystals were grown by the synthesis, solute diffusion (SSD) method. The doping concentration was controlled by varying the partial pressure of sulfur in the ampoule. The morphology and dislocation density of the grown crystals were studied. Sulfur of high concentration in the indium melt did not inhibit the single crystal growth of InP. It was found from X-ray topographic studies that the crystals became dislocation-free at the sulfur doping level of 2×1019cm-3.
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