Growth temperature and phosphorus vapor pressure dependencies of Si incorporation into InP crystals in solution growth process

Abstract

Electrical properties of synthesis, solute-diffusion (SSD)-grown InP bulk crystals were found to depend on growth temperature and phosphorus vapor pressure. The dependencies were investigated on the basis of thermodynamic analysis of the In-P-Si system and concluded to be caused by a reaction between silica crucible and In-P solution. It is shown that Si concentration in crystal increases nearly exponentially with a decrease in the reciprocal growth temperature and linearly with an increase in the cubic root of phosphorus vapor pressure.