Abstract
The theoretical spectral responsivity of a diffused pn junction is computed in the case of a silicon n +p junction which employes a rather deep (4, 7 μ) and lightly doped N + front region. Comparing experimental results with theoretical predictions the diffusion length L and surface recombination velocity S 0 can be determined. Several cases are examined: the influence of an oxide layer on the front and of gettering processes on L and S 0 are presented and the overall sensitivity of the method is discussed.
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