Abstract

We present results of nanosecond laser ablation of silicon over a broad range of laser intensities, investigated by studying the time evolution of the ablation plume ejection, which, as measured by transmission of a probe beam, consists of a fast ejection phase followed by a delayed slow ejection phase. Experimental results indicate that different physical processes dominate at different ablation stages. The laser intensity threshold for the appearance of the slow ejection is ∼30GW∕cm2. The plume kinetics parameters extracted from our experiments agree well with estimations based on blast wave and homogeneous nucleation theories, providing a physical explanation for the observed ablation rate dependence on the laser light intensity.

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