Abstract
Thin films were deposited by laser ablation of carbon, alumimum, silicon and copper, using a high peak power Ti:sapphire laser. Each film was deposited on a silicon substrate at room temperature at a peak intensity of 3×1014 W/cm2. A smooth film was obtained by laser ablation of carbon and the other films were composed of many particles of 100 nm in diameter on average. The film deposited by laser ablation of silicon was twice as thick as the others. The results of X-ray photoelectron spectroscopy showed that all the films contained carbon. Furthermore, it was shown that the films deposited by laser ablation of aluminum and silicon contained oxygen as aluminum and silicon oxides, respectively.
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