Experimental study of infrared nanosecond laser ablation of silicon: The multi-pulse enhancement effect

Abstract

Experimental study has been performed on nanosecond (ns) laser ablation of silicon at 1064 nm, through which a so-called “multi-pulse enhancement effect” has been revealed, which has been rarely reported in literature. The major features of this effect are: (1) for multi-pulse laser ablation at the same spatial location, the ablation efficiency increases as the pulse number increases and the pulse-to-pulse temporal distance decreases; (2) for multi-pulse ablation performed sequentially at a group of locations, the ablation quality and efficiency starting from the second location can be significantly enhanced if the distance between adjacent locations is sufficiently small. Further study is needed to confirm and understand the underlying physical mechanism for the multi-pulse enhancement effect, which can be utilized to significantly improve the quality and efficiency of laser silicon micromachining using the low-cost and low-energy-consumption infrared ns lasers. This may decrease the cost and energy consumption of many relevant areas, such as the solar cell industry.