Abstract
AbstractZinc‐doped indium oxide (IZO) thin films were deposited on silicon dioxide substrates by radio‐frequency magnetron sputtering using an IZO ceramic target with In2O3/ZnO weight ratio of 9:1. The effects of power, pressure, and distance between target and substrate on microstructure and photoelectric properties of IZO films were investigated. The results show the performance of IZO films prepared under the conditions of power 80 W, air pressure .5 Pa, and target base distance 80 mm are the best, and the IZO films are amorphous with high transmittance (>86.0%), high mobility (>45.0 cm2/V s), and low resistivity (less than 2.0 × 10−4 Ω cm), which are the best photoelectric performance reported at present. This work provides a feasible research approach for preparing high‐performance IZO thin films.
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