Abstract
High-electron-mobility Mo-doped In2O3 (IMO) thin films were prepared by rf magnetron cosputtering combined with postdepositon annealing. Both carrier concentration and electron mobility were considerably improved by annealing in vacuum at 550 °C. A minimum resistivity of 1.5×10-4 Ω·cm with an electron mobility of 94 cm2 V-1 s-1 was obtained for an annealed IMO thin film on a glass substrate. The IMO thin film exhibited an optical transmittance of over 70% at wavelengths ranging from 400 to 1800 nm. Postdeposition annealing is therefore one of the effective methods for improving the electrical properties of IMO thin films without sacrificing optical transmittance.
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