Abstract
The indium metal thin films were deposited at room temperature by dc magnetron sputtering on glass substrate. This indium thin film is post-treated with microwave irradiation at ambient atmosphere to convert it into the In2O3 thin film. Indium oxide (In2O3) thin film was successfully synthesized on glass substrate by using microwave irradiation. This method has advantages over the conventional heating method because it takes lesser treatment time, and the quality of film is better. The effect of microwave irradiation for different time was studied by XRD and UV–VIS spectroscopy. X-ray diffraction result shows the presence of cubic phases in synthesized In2O3 thin film without any significant impurity. Optical spectroscopy measurements show a large optical transparency, greater than 60 %. This In2O3 thin film is highly suitable for the transparent conducting oxide, solar cell and gas sensor applications.
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