?Preparation of ITO and IZO thin films by using Facing Target Sputtering (FTS) method

Abstract

In study, for transparent conductive oxides (TCOs) we investigated the electrical and the optical properties of thin films of indium oxide (In2O3) doped with 10 wt.% tin oxide (SnO2) and of indium oxide (In2O3) doped with 10 wt.% zinc oxide thin films in facing targets sputtering (FTS) system. All thin films were prepared on the glass at room temperature and at various oxygen contents in the sputter gas. All as-deposited thin films were annealed at various temperatures in an air atmosphere. The electrical and the optical properties of the as-deposited thin films were investigated by using a four point probe, an UV/VIS spectrometer, an X-ray diffractometer (XRD), and a Hall Effect measurement. As a result, with increasing oxygen content in the sputter gas, the optical transmittance in the visible range of all thin films increased (>80 %). ITO and IZO thin films had resistivities of 6.7 × 10−4 Ω·cm and 4.5 × 10−4 Ω·cm respectively at the optimum oxygen contents. After post-annealing, the structure of ITO thin film was polycrystalline, but the IZO thin films had amorphous.