Abstract

GaN-based planar schottky barrier diodes with potential applications in high frequency multipliers were designed, fabricated and characterized. The parasitic parameters of diodes were reduced by the air-birdge technology and ultrathin substrate. The total capacitance of diodes was only 12.5fF, and the series resistance is 16Ω. The Diodes with a thickness of 50µm and an anode diameter of 5µm had a hard breakdown voltage of 22.8V, the turn-on voltage of 0.45V@10µA and a cut-off frequency (f c ) of 796GHz.

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