Abstract
A new high voltage 4H-SiC Schottky barrier diode (SBD) structure for monolithic microwave integrated circuit (MMIC) applications is proposed. It employs one or more floating metal rings (FMRs) which work similar to guard rings. Influence of FMRs structure on the breakdown voltage and cut-off frequencies of the SBD were studied by numerical device modeling. As compared to the one without ring, about 107% and 134% improvement in breakdown voltage while only about 17% and 25% decrease in cut-off frequencies have been achieved in SBDs with one and two rings
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
