Abstract
Ti is a structural material of large technological interest because of its low weight, its excellent corrosion resistance and its high strength-to-weight ratio. There is thus an intrinsic interest in studying its matter transport behavior. Nevertheless, diffusion phenomena of substitutional elements in the {alpha}-phase have not been measured in great detail. The reason lies in difficulties inherent to the {alpha}-phase: diffusion measurements are limited to a very narrow temperature range due to the limited stability range of the {alpha}-phase and the small expected diffusion coefficients, D<10{sup {minus}17} m{sup 2}s. Only recently the use of Rutherford Backscattering Spectrometry (RBS) and Heavy Ions RBS (HIRBS) techniques allowed to measure several substitutional elements in {alpha}-Ti as these techniques are suitable for analyzing shallow penetration profiles. The present study deals with the diffusion of Pb implanted in {alpha}-it using RBS technique for measuring the diffusion profiles. This work is part of a larger study being developed in order to accumulate substitutional diffusion data in the {alpha}-Ti matrix with the aim of investigating its diffusion behavior ({alpha}-Ti and {alpha}-Zr show both self-diffusion parameters that are not consistent with the so called ``normal behavior`` and besides, in the {alpha}-Zr case, a downward curvature in the Arrheniusmore » plot is observed) and to evaluate, in a future work, the effect of Pb implantation on its diffusivity comparing results obtained from implanted samples with those obtained with Pb deposition by the vacuum evaporation technique. Such effect, if existent, should be noticeable at lower temperatures.« less
Published Version
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