Growth analysis of self-formed Ti-rich interface layers in Cu(Ti)/dielectric-layer samples using Rutherford Backscattering Spectrometry

Kazuyuki Kohama,Kazuyoshi Maekawa,Kenichi Mori,Kazuhiro Ito,Yasuharu Shirai,Masanori Murakami

doi:10.1109/iitc.2009.5090372

Growth analysis of self-formed Ti-rich interface layers in Cu(Ti)/dielectric-layer samples using Rutherford Backscattering Spectrometry

Kazuyuki Kohama, Kazuyoshi Maekawa + Show 4 more

https://doi.org/10.1109/iitc.2009.5090372

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Publication Date: Jun 1, 2009

Citations: 3

Affiliation: Kyoto University, Renesas Electronics (Japan)

#Rutherford Backscattering Spectrometry Technique #Ti-rich Layers + Show 5 more

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Abstract

The Rutherford backscattering spectrometry (RBS) technique was employed for the growth investigation of Ti-rich interface layers in the annealed Cu(Ti) dielectric-layer . Growth behavior observed in RBS was similar to that in TEM. Thus, the RBS technique is indicated to be appropriate method for the growth analysis of the Ti-rich interface layers.

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