Abstract
The effect of the crystallographic orientation on the arsenic distribution in a silicon sample during rapid thermal annealing (RTA) was investigated. An arsenic dose of 6×10 15 cm -2 was implanted into Si(111) and Si(100) at 30 keV in a commercial ion implanter with mechanical beam scanning. It is found that after “cold” RTA (about 900°C for 16 s) a highly disordered layer is present and there is a difference between arsenic redistribution in Si(111) and Si(100). In the case of “hot” RTA (about 1105°C for 30 s) the amorphous layer created by the heavy arsenic implant is completely regrown, and there is little or no difference in bulk arsenic distributions between both orientations. However, Rutherford backscattering spectrometry measurements show the presence of a multipeak formation in the surface region around the as-implanted peak position. A recently developed multiregion diffusion model for inhomogeneous media is used to fit the experimental profiles.
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