10–20 MeV energy range Si implantations into InP:Fe

Abstract

Si implantations in the energy range 10–20 MeV were performed into InP:Fe with a dose of 4×1014 cm−2. The secondary-ion mass spectrometry profiles for the as-implanted samples were used to calculate the first four statistical moments of the Si implant distribution. Either 875 °C/10 s rapid thermal annealing or 735 °C/10 min furnace annealing was used to activate the Si implants. No redistribution of Si was observed after annealing. Electrochemical capacitance-voltage profiling was performed on the annealed samples to obtain the carrier concentration depth profiles. Activations of 90%–100% and peak carrier concentrations of 3–4×1018 cm−3 were measured for 10–20 MeV Si implants after 875 °C/10 s rapid thermal annealing.