Abstract
Melt-regrowth properties of 60-nm-thick silicon films were characterized in the case of electrical-current-induced joule heating. The electrical energy accumulated at a capacitance caused melting of the silicon films via joule heating with a maximum intensity at 1.5×106 W/cm2. The melt-regrowth duration increased from 6 to 75 μs as the capacitance increased to 0.05–1.5 μF. Crystalline properties of the silicon films were also investigated. 7 μm long crystalline grains with the (110) preferential crystalline orientation were observed using a transmission electron microscope. The tensile stress at 3.4×108 Pa remained in the films. The analysis of electrical conductivity resulted in a density of defect states of 3.5×1016 cm−3 in the films. The product of the generation efficiency, the carrier mobility and the average carrier lifetime was estimated to be ∼10−3 cm2/V.
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