Abstract
Electrical-current-induced joule heating was applied to the crystallization of silicon films formed on glass substrates. Electrical energy accumulated at a capacitance was applied to the silicon films. Coincident irradiation with 30-ns-pulsed laser melted films partially reduced their resistance. Complete melting of 42 μs and solidification duration of 28 μs were observed in the case of heating at a capacitance of 2 μF The analysis of electrical conductivity reveled a density of defect states of 1.3×1012 cm−2 at grain boundaries. The formation of 15-μm crystalline grains was observed. The preferential crystalline orientation was (110).
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