Abstract
Electrical-current-induced joule heating was applied to the crystallization of 60-nm-thick amorphous silicon films formed on glass substrates. Three-µs-pulsed voltages were applied to silicon films connected with a capacitance in parallel. Coincident irradiation with a 28-ns-pulsed excimer laser melted films partially and reduced their resistance. Complete melting for 12 µs and a low cooling rate of 1.1×108 K/s were achieved by joule heating from electrical energy that accumulated at a capacitance of 0.22 µF. The analysis of electrical conductivity suggested a density of defect states of 1.5×1012 cm-2 at grain boundaries. The formation of 3.5-µm-long crystalline grains was observed using a transmission electron microscope. The preferential crystalline orientation was (110).
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