Abstract
Electrical-current-induced Joule heating was applied to crystallization of 60-nm-thick amorphous silicon films formed on glass substrates. 3-μs-pulsed voltages were applied to silicon films connected with a capacitance in parallel. Coincident irradiation with 28-ns-pulsed excimer laser melted films partially and reduced its resistance. Complete melting for 12 μs and a low cooling rate at 1.1×108 K/s were achieved by Joule heating from electrical energy accumulated in the capacitance at 0.22 μF. For 7.4×1017 cm-3 phosphorus-doped films, analysis of temperature change in the electrical conductivity gave that the density of defect states localized at grain boundaries was 1.5×1012 cm-2. Formation of 3.5-μm-long crystalline grains was observed by transmission electron micrograph. Preferential crystalline orientation was (110).
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