Abstract
Detailed Raman scattering studies of InSb/In 1 − x Al x Sb (0.15 < x < 0.5) strained-layer superlattices grown by magnetron sputter epitaxy on (001)InSb substrates are reported for the first time. A number of folded acoustic phonons appear in the Raman spectra and their frequencies are accurately predicted by Rytov's theory of acoustic vibrations in layered media. The longitudinal optic phonons in the In 1 − x Al x Sb layers exhibit two-mode behavior and their shift due to the intralayer strain is discussed. Resonant Raman scattering was used to probe the electronic structure in the region of the E 1 and E 1 + Δ 1 optical gaps. The two sets of peaks observed in the plots of the Raman cross section vs photon energy are shown to originate from the independent electronic transitions in the alternating layers. Estimates of the strain and confinement effects were made and these agree with the observed differences from bulk material.
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