Abstract
Raman spectroscopy is used to study dopants introduced into ZnSe to produce p-type material. Special attention is paid to nitrogen-doped epitaxial layers and Raman scattering involving the electronic levels of nitrogen acceptors is reported. In these layers spin-flip scattering by electrons at a new type of donor centre at a depth of about 50 meV is also observed. This new donor is believed to play an important role in the compensation process that limits the net acceptor concentrations attainable in this material.
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