Abstract
ZnSe doped with nitrogen(N) has been prepared by molecular beam epitaxy using N2*, N* nitrogen radicals, N2+ ions and N atoms from an electron cyclotron resonance nitrogen plasma source. N-doped ZnSe/GaAs heteroepitaxial layers showed p-type conduction with net acceptor concentrations as high as 1.8×1018 cm-3, and the activation rate of N atoms was 60%. Photoluminescence spectra measured at 7 K from p-type ZnSe:N layers with net acceptor concentrations higher than 1018 cm-3 were dominated by two different donor-acceptor pair emission bands with zero phonon energies of 2.684 eV and 2.697 eV.
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