Plasma simulation of HF plasma generated in dual-frequency chamber for high aspect ratio dielectric etching

Abstract

For the 3D NAND memory hole with a high aspect ratio above 100, the etching process with hydrogen-fluoride (HF) contained plasmas has been proposed. We have developed a simulation model for gas-phase reactions that reproduces the HF plasma in experiments. The HF plasma was generated using a power supply of 100 MHz frequency, and electron and F densities were measured. The simulation model was constructed on the basis of the collision cross sections and reaction constants reported in the previous papers, and the F density in the simulation was calibrated by comparing it with that in the experiments. As a result of the plasma simulation, the densities of F and the electrons were determined to be 7.52 × 1016 m–3 and 8.50 × 1016 m–3, respectively. Taking into consideration the errors in the experiment, we considered that the simulation model is able to reproduce the experimental HF plasma well.