Abstract
Ferroelectric PZT films were fabricated using an R.F. planar magnetron sputtering technique with 100% oxygen as the sputtering medium. The effect of growth conditions such as substrate temperature, sputtering gas composition and sputtering pressure on rate of sputtering, dielectric constant and dc conductivity are reported. The stoichiometry was governed by the target composition. Post-deposition annealing of films improved all physical parameters. A clear dielectric transition around 350°C and a square polarization hysteresis loop was evidence for the ferroelectricity in the PZT films.
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