Abstract
A model of mechanical stresses acting upon a ferroelectric film in a thin-film capacitor structure of the Si-SiO2-Pt-PZT-Pt type is proposed. An analysis of this model showed that, in most cases, thin PZT films with thicknesses within 100–200 nm (used in the elements of NVFRAM devices) are subjected to tensile stresses. It is suggested that replacing tensile stresses by compressive stresses in PZT films would increase the stability of operation of memory devices.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
