Abstract
Laser-assisted atomic layer epitaxy (LALE) is used to locally deposit device-quality material for the first time, as demonstrated by successfully fabricating broad-area lasers with a GaAs quantum well grown in this way. By hybridizing LALE with conventional metalorganic chemical vapor deposition epitaxy, heterostructures are grown which allow characterization of material quality by photoluminescence and capacitance-voltage measurements. In addition, graded-index separate-confinement heterostructure lasers with threshold current densities of 650 A/cm2 for 580-μm-long devices were made using the LALE quantum well deposit, while devices made away from the deposit did not lase.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
