Abstract
Atomic layer epitaxy (ALE) has been adapted for hybrid use with conventional atmospheric pressure metalorganic chemical vapor deposition (MOCVD) by using organometallic precursors for the column III elements. Saturation of the growth rate to one monolayer per cycle is observed over a range of growth parameters by thermally driven and laser (or light) driven reactions. The mechanisms causing this saturation are investigated using empirical growth studies and surface reaction studies in UHV conditions. It is concluded that the useful range of ALE growth temperatures for GaAs using metal alkyls is limited by gas phase reactions which frustrate the basic saturation process. Strategies for overcoming this limitation to achieve general purpose epitaxial growth by ALE are described.
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