Abstract
ABSTRACTThe kinetics of atomic layer epitaxy (ALE) of GaAs utilizing trimethylgallium and arsine are described. The results show that saturated monolayer growth can be achieved-in the temperature range 445°C -485°C and that high quality materials can be grown.. Hybrid A1GaAs/GaAs heterostructures have been grown utilizing ALE for the active regions and conventional metalorganic chemical vapor deposition (MOCVD) for the confining regions that yield high quality quantum wells and low threshold quantum well lasers.
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