Quantum mechanical effect in temperature dependence of threshold voltage of extremely thin SOI MOSFETs

Abstract

This paper examines the temperature dependence of the threshold voltage ( V TH ) of extremely thin fully depleted SOI MOSFETs with thickness under 10 nm over a wide range of temperatures (31–300 K). The calculated temperature dependence of V TH shift for devices with 10 or 6 nm thick SOI layers is compared to experimental results. Theory suggests that the energy quantization of electrons in the ultra-thin SOI layer strongly suppresses the temperature dependence of threshold voltage. This is partially supported by a comprehensive analysis of the experimental results.