Abstract
In this session, we have five excellent papers on the characteristics of mobility and the temperature dependence of threshold voltage in advanced devices. The first paper is an invited paper by K. Uchida from Tokyo Institute of Technology. The carrier transport of current stress enhanced Si channel devices is reviewed first. Then the directions for future channel materials are discussed. M. Saitoh from Toshiba gives a comprehensive analysis of scaled (110) devices. A detail study based on STI induced stress and velocity saturation is presented. Y. Zhao from University of Tokyo investigates the surface roughness and Coulomb scattering induced mobility characteristics in biaxially-strained Si devices. R. Lijima from Toshiba America Electronic Components Inc. addresses experimental and theoretical analysis of factors causing asymmetrical temperature dependence of Vt in High-K metal gate CMOS with capped High-k techniques. The last paper of the session is given by S. Han from IBM describes the difference of the temperature dependence of metal gate and poly gate SOI MOSFET threshold voltage. Temperature responses of the Fermi level shift and the depletion effect will be emphasized.
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