Temperature dependence of threshold voltage in thin-film SOI MOSFETs

G Groeseneken,J.-P Colinge,H.E Maes,J.C Alderman,S Holt

doi:10.1109/55.57923

Temperature dependence of threshold voltage in thin-film SOI MOSFETs

G Groeseneken, J.-P Colinge + Show 3 more

https://doi.org/10.1109/55.57923

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Journal: IEEE Electron Device Letters	Publication Date: Aug 1, 1990
Citations: 147

Affiliation: IMEC, John Innes Centre

#Temperature Dependence Of Threshold Voltage #Temperature Dependence Of Voltage + Show 8 more

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Abstract

A first-order model for the temperature dependence of threshold voltage in thin-film silicon-on-insulator (SOI) n-MOSFETs is described. The temperature dependence of the threshold voltage of thin-film SOI n-channel MOSFETs is analyzed. Threshold voltage variation with temperature is significantly smaller in thin-film (fully depleted) devices than in thick-film SOI and bulk devices. The threshold voltage is shown to be dependent on the depletion level of the device, i.e. whether it is fully depleted or not. There exists a critical temperature below which the device is fully depleted, and above which the device operates in the thick-film regime.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>

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