Abstract
Precision scanning of the (B⊥,B‖) plane between projections of the magnetic field perpendicular and parallel to the layers of an n-InxGa1−xAs∕GaAs (x≈0.2) double quantum well in measurements of its longitudinal magnetoresistance can reveal a number of features due to the complex energy spectrum of the double quantum well against the background of structure due to magnetic breakdown. Trajectories describing the features of the magnetoresistance on the (B⊥,B‖) plane can be described semiquantitatively on the basis of quasiclassical calculations of the quantization of the energy spectrum of the double quantum well under the influence of the perpendicular component of the field. Peaks due to magnetic breakdown are enhanced as the total value of the magnetic field increases. Their observed spin splitting corresponds to an effective value of the Landé factor ∣g*∣≈3.
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