Abstract
A new mechanism of the photovoltaic effect in a terahertz frequency range is proposed that is capable of explaining the features of terahertz photocurrents observed previously in asymmetric InAs quantum wells and double GaAs quantum wells in an external tilted magnetic field. It is shown that, in the asymmetric semiconductor heterostructures occurring in a tilted magnetic field, an edge photocurrent is generated due to the absorption of radiation on the electron transitions between Landau levels. A new approach to the creation of highly sensitive terahertz photodetectors based on asymmetric semiconductor heterostructures is proposed.
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