Abstract

In this paper, we investigated the band structure and quantum magneto transport properties of the In0.53Ga0.47As(d1=100Å)/InP(d2=70Å) type I multi quantum wells (MQWs) at low temperature. These studies were based on the envelope function and effective mass formalisms. We calculated the effect of d1, d2, the band valence offset and temperature on the band gap and the cut-off wavelength of detection. The result of the computed density of states and the position of Fermi level indicate that this sample is quasi two-dimensional system with n-type conductivity. The calculated evolution of the cutoff wavelength with temperature predicts this MQWs can be used as a short-infrared detector. Furthermore, we interpreted theoretically the photoluminescence, the Shubnikov de Haas (SdH) and quantum Hall effects observed by Pusep et al.

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