Abstract
Effects of heavy ion irradiation on InP based structures have been discussed. In specific, recent results on heavy ion irradiation of InP and InGaAs/InP multi quantum wells have been studied as a function of incident ion fluence and electronic energy loss. Studies involve photoluminescence (PL), high resolution X-ray diffraction (HRXRD), raman spectroscopy (RS) and atomic force microscopy (AFM). The heavy ion induced modifications in InP have been analyzed and damage creation has been correlated with a possible mechanisms. Multi quantum wells were investigated before and after irradiation and band gap engineering has been demonstrated using swift heavy ions for the first time. Band gap shift as a function of incident ion fluence has been observed and a maximum shift of 82nm for a fluence of 1×1013ions/cm2 has been reported. Possible applications in optoelectronic devices are highlighted.
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