Improvement of current injection uniformity within multi quantum wells in blue-violet laser diode

Abstract

Nanostructure semiconductor materials based on group-III nitride are very applicable in our nowadays technology and industry [1–4]. Direct wide band gap group III-Nitrides, including GaN, AlGaN and InGaN, can partly cover most parts of the solar spectrum from ultraviolet to infrared spectra due to their ability to vary their band gap. Furthermore, these materials have other good properties such as high mobility, high saturation velocities, high absorption and radiation coefficients [5,6] which make them promising in modern electronic and optoelectronic applications such as blue semiconductor laser, light emitting diodes, photodetectors and photovoltaic devices [7,8]. Multi quantum well lasers for each application special wavelength and power is proposed and used in various devices [8]. Therefore, careful design of waveguide and electrical current flow is necessary for each application [8]. In this paper we try to optimize special class of semiconductor laser based on InGaN multi quantum wells (MQWs) which their most application is in data storage in DVD-HD. To increase data storage capacity in DVD-HDs laser should be optimized for higher output power to increase the data transfer speed, higher thermal stability up to 350K or even more [9]. Stable lateral has been mode to minimize beam fluctuation and control divergence angel and reduction of noise as result of laser operation at high power condition. To approach these MQWs LD characteristics, novel planar blue-violet laser diodes have been fabricated successfully [9]. In this paper we report a new architecture to optimize the MQWs LD characteristics in [9]. The organization of this paper is the following. In the first section we try to calibrate our MQWs LD material parameters to validate our simulation results. In Section 2, we define our MQWs LD geometrical properties and selected material parameters. In next section, we compare our simulated results of our new MQWs LD with the reference LD to conclude better laser performance through our proposed structure.