Abstract
This paper presents the investigation of quantum effects of gate underlap 20nm Silicon-On-Insulator (SOI) MOSFETs at 60 GHz. At optimized spacer s = 0.8LG with doping gradient d = 5nm/decade the device DC and AC performances have been investigated with and without quantum effects. After incorporation of quantum effects, at 60 GHz the device current gain, unilateral gain (ULG) and device intrinsic gain are found 50 dB, 70 dB and 36dB respectively at power consumption 0.6 mW. All these parameters have been extracted using 2D ATLAS device simulator. The average 50% performance of device has been increased after incorporating quantum effects model. Although simulated result for current gain nearly 25% higher than measured data (gate length LG = 20nm) whereas for transit frequency fT is differ (>13%). However, these comparisons with limited measured data suggest the possibility of use of this device technology in the design of key blocks like low noise amplifier (LNA) and Mixer for mm-w applications.
Highlights
In the past few years, low-power low-voltage silicon-on insulator (SOI) MOSFET technology has emerged as a leading candidate for highly integrated circuits for wireless applications [1]
Quantum effects in underlap SOI MOSFET has been observed for millimeter wave applications
In Table-1 the data are tabulated the performance of device before and after adding quantum effects model
Summary
In the past few years, low-power low-voltage silicon-on insulator (SOI) MOSFET technology has emerged as a leading candidate for highly integrated circuits for wireless applications [1]. Due to quantum confinement of carriers in a thin silicon layer, the minimum energy for electrons in the conduction band increases when. Since only sub-bands with energy less than 10 kT above the minimum of the conduction band are populated with a significant number of electrons, the number of sub bands N used in each calculation is limited and can be calculated from the silicon cross-sectional area and the temperature. The resulting potential distribution is fed into the Schrödinger equation to calculate the two-dimensional (2-D) wave functions and their energy levels. Using this information, the electron concentration n(x, y) is calculated using (4). The criterion for convergence is a variation of electron concentration less than 0.1% between two iterations
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