Abstract
Perovskite-type CH3NH3(MA)PbI3-based photovoltaic devices were fabricated and characterized. Effects of cesium iodide (CsI) and/or tin bromide (SnBr2) additions on the photovoltaic properties and microstructures of the perovskite solar cells were investigated. The open-circuit voltage increased with CsI addition because of increase of the band gap energy. The short-circuit current densities and the external quantum efficiencies increased by CsI and SnBr2 addition because of decrease of series resistance, which resulted in the improvement of photovoltaic performance of the perovskite solar cells. X-ray diffraction indicated the doped elements existed in the perovskite crystals. The cell prepared by a starting composition of MA0.95Cs0.05Pb0.95Sn0.05I2.9Br0.1 showed the best photovoltaic performance in the present work.
Highlights
Hybrid organolead halide perovskites have a composition of ABX3, where A is organic or inorganic cation such as CH3NH3+ (MA+), HC(NH)NH2+ (FA+) or Cs+, B is metal cation (Pb2+ or Sn2+) and X is halogen (I, Br- or Cl-), and they have been extensively investigated as light absorbers
By the simultaneous addition of cesium iodide (CsI) and SnBr2, the short-circuit current density and the open-circuit voltage increased to 16.5 mA cm-2 and 0.780 V, and the series resistance decreased to 7.23Ω cm-2, respectively, which resulted in the improvement of the photovoltaic performance compared with that of the standard MAPbI3
Photoelectric conversion was observed for the perovskite solar cells in a visible light range, and the external quantum efficiencies (EQE) increased by the addition of CsI and
Summary
Hybrid organolead halide perovskites have a composition of ABX3, where A is organic or inorganic cation such as CH3NH3+ (MA+), HC(NH)NH2+ (FA+) or Cs+, B is metal cation (Pb2+ or Sn2+) and X is halogen (I-, Br- or Cl-), and they have been extensively investigated as light absorbers. Sn-doped perovskite solar cells have been reported to have low band gap energy (Eg), and the current density increased [14,15,16,17]. The purpose of the present work is to fabricate and characterize the CH3NH3PbI3 (MAPbI3), MA0.95Cs0.05PbI3, MAPb0.95Sn0.05I2.9Br0.1, MA0.95Cs0.05Pb0.95Sn0.05I2.9Br0.1 solar cells to investigate effects of CsI and/or SnBr2 additions to the MAPbI3 phase. In the previous work [18], simultaneous addition of CsI, CsBr and SnBr2 to MAPbI3 was effective for improvement of surface coverage of the perovskite crystals for the cell, which resulted in the increase of the short-circuit current density, the fill factor and the conversion efficiency. The detailed fabrication and analysis of the devices were performed by measuring internal quantum efficiencies, UV-vis absorbance and microstructures using X-ray diffraction (XRD)
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