Quantitative analysis of performance degradation in movable MEMS devices by a multiscale approach

Abstract

The rapid advancements in AI and 5G/6G communication technologies have intensified the demand for MEMS devices characterized by exceptional performance and diversity. Simultaneously, the imperative for enduring stability in these devices has become increasingly critical. Unforeseen reliability issues pose substantial challenges to the full-scale application of these advanced MEMS devices, underscoring the importance of understanding their failure mechanisms. Presently, there is a scarcity of comprehensive research in reliability computation and analysis. In this study, we adopt cross-scale damage variables as a nexus, linking responses across three scales: material, structural, and performance. We implement a synergistic finite element-molecular dynamics approach for multiscale analysis. Using a prototypical MEMS resonator structure as a case study, we establish quantitative interrelations among these three scales, enabling precise depiction of atomic failure behavior and its impact on resonant frequency degradation. This approach offers an atomically grounded explanation for the fundamental material processes underlying frequency degradation. Our numerical analyses explore the failure mechanisms responsible for the frequency degradation in MEMS resonators. Additionally, we propose several optimized strategies for the design and preparation phases aimed at enhancing fatigue performance. These findings are particularly relevant in light of the growing necessity for devices that maintain long-term stability.