Abstract
The degradation behavior for Si p–i–n photodiodes by neutron irradiation at different temperatures was studied. The degradation of the electrical device performance is more pronounced for low-temperature irradiations. Two electron capture levels at E C - 0.22 eV and E C - 0.40 eV , respectively, were observed by deep level transient spectroscopy. The degradation of the device performance is correlated with the introduction rate of the radiation-induced lattice defects.
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