Abstract
Results are presented of a deep level transient spectroscopy (DLTS) investigation of the radiation induced lattice defects in shallow trench isolation (STI) silicon diodes by 20 MeV proton and 2 MeV electron irradiation. The correlation between the deep levels and the post-rad device performance will be studied, together with the recovery behavior by isochronal thermal annealing. It will be demonstrated that the reverse and forward current increase after irradiation, which is caused by a decrease of the generation and recombination lifetime, respectively. Two electron capture levels were observed in meander diodes after 10 14 p cm −2 proton irradiation. The degraded device performance recovers by isochronal thermal annealing and correlates well with the annealing of the radiation-induced electron traps. During the annealing, the electron traps transform in other more stable defect centers.
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