Abstract
Deep-level transient spectroscopy has been used to study the deep levels introduced by silver impurity in silicon. New levels in addition to the well-known silver-related deep donor and acceptor levels have been found. Interaction of silver-related defects with radiation-induced defects has been studied using α irradiation. Data on the annealing characteristics of silver-related levels are reported. Isochronal thermal annealing before and after irradiation provides interesting insights on such interactions and on the nature of the silver-related levels. In particular, the two newly observed prominent silver-related levels exhibit a complementary annealing behavior, suggesting a mutual thermal transformation. The presence of silver is seen to produce a significant change in the annealing characteristics of the prominent radiation-induced A-center defect.
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