Abstract
The degradation and recovery behavior of strained Si 1− x Ge x diodes and heterojunction bipolar transistors (HBTs) irradiated by protons are studied. The degradation of device performance and the generation of lattice defects are reported as a function of fluence and also compared extensively with previous results obtained on electron and neutron irradiated devices. The radiation source dependence of the degradation is discussed taking into account the number of knock-on atoms and the nonionizing energy loss (NIEL).
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