Abstract
New power devices — IGBT's and a bipolar transistor with cellular structure are investigated for applications in fast switching PWM inverters. Device ratings are in the 1000 V/100 A range, inverter power reaches up to some ten kilovoltamperes, respectively. Subjects of the comparison are the gate drive requirements, conduction and switching losses, switching speed and overload capability. An automated test equipment for the integral measurement of power losses in function of the switching frequency is described. As a result IGBT's need simple gate drive circuits, but operating frequency at rated current is lower, than that of a bipolar junction transistor with cellular structure. However the base drive circuit of a cellular transistor is more complex.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
