Abstract
Semi-insulating Si-implanted GaAs has been irradiated by a ruby-laser pulse (λ=0.694 μm, tp=15 ns) without using an encapsulant. Hall-effect measurements indicate that the values of sheet resistance, effective sheet electron concentration, and effective electron mobilities are roughly comparable to those of conventionally annealed samples. TEM micrographs show a difference in the defect structure after these two types of annealing.
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