Abstract
AbstractRf electromagnetic magnetoplasma technique is used to study the influence of hydrostatic pressure (up to 1.0 GPa) on the effective concentration and cyclotron mobility of electrons in the binary plane in semiconducting pure and Te‐doped Bi1‐xSbx alloys (0.076 ≤ x ≤ 0.15) at 77 K. The pressure derivative of the energy gap at the L‐point does not depend on Sb concentration and is close to the known value at 4.2 K. The pressure and concentration dependences of electron cyclotron mobility indicates the importance of acoustic phonon scattering of electrons. An additional scattering which depends on the Sb concentration must also be taken into account in undoped samples.
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