Abstract
Summary form only given. In this paper, we report on small-aspect-ratio and high-power 660-nm AlGaInP laser diodes with a newly developed ridge stripe in which the side-walls are steeper than for an ordinary wet-etched mesa-shape ridge stripe. These laser diodes have demonstrated stable 100-mW operation at 70/spl deg/C. Our laser diode has a buried ridge stripe structure with an AlInP current blocking layer. The active layer is a strain-compensated multiple quantum well (SC-MQW) structure, containing compressively strained GaInP wells and tensile strained AlGaInP barriers. The window regions are formed in the vicinity of both facets by Zn-diffusion. The cavity length is 900 /spl mu/m and the reflectivity of the front and rear facets is 5% and 95%, respectively.
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