Abstract
By introducing InGaP tensile-strained layers as barriers of InAsP compressively strained multiple quantum wells, InAsP/InGaP strain-compensated multiple quantum wells with high crystalline quality were successfully grown by metalorganic chemical vapor deposition. For the first time, a laser, emitting at 1.2 µ m, consisting of all-ternary quantum wells as an active layer was fabricated. The threshold current density of 1 kA/cm2 was obtained without the use of a separate confinement heterostructure layer for a cavity length of 1000 µ m.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
